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IRF540N N-Channel MOSFET

IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features

  • It has 100% avalanche rated
  • It has Fast switching system
  • Ease of paralleling
  • New high voltage benchmark
  • Simple drive requirements
  • Low on-resistance

Applications

  • Switching high power devices
  • Motor speed control
  • LED dimmer and flasher
  • Converters and inverters circuits
Specification
Part Number IRF540 
PackageTO-220-3
PolarityN Channel 
Drain-Source Breakdown Voltage100 V
Continuous Drain Current33 A
Gate-Source Voltage20 V
Power Dissipation140 W
Gate Charge47.3 nC
Country of OriginChina

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